Evaluation of high performance converters under low dose rate total ionizing dose (TID) testing for NASA programs

Author

Sharma, Ashok K. ; Sahu, Kusum ; Kniffin, Scott

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

fYear

1998

fDate

36000

Firstpage

142

Lastpage

147

Abstract

This paper reports the results of low dose rate (0.02-0.04 Rads(Si)/sec) TID tests performed on several types of high performance analog-to-digital and digital-to-analog converters (ADCs/DACs). The test results showed that BiCMOS parts were very susceptible to radiation damage at very low levels [2-5 kRads(Si)] and the bipolar parts showed higher tolerance [20-100 kRads(Si)] depending on the part type and manufacturer

Keywords

BiCMOS integrated circuits; analogue-digital conversion; bipolar integrated circuits; digital-analogue conversion; gamma-ray effects; integrated circuit testing; radiation hardening (electronics); space vehicle electronics; 2 to 5 krad; 20 to 100 krad; ADC; BiCMOS parts; DAC; NASA programs; annealing effects; bipolar parts; high performance converters; low dose rate; missing codes; radiation damage susceptibility; radiation hardness; total ionizing dose testing; Annealing; Availability; BiCMOS integrated circuits; Degradation; Digital-analog conversion; Manufacturing; NASA; Performance evaluation; System testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1998. IEEE

Conference_Location

Newport Beach, CA

Print_ISBN

0-7803-5109-6

Type

conf

DOI

10.1109/REDW.1998.731494

Filename

731494