Title :
Comparison of VLS grown Si NW tunnel FETs with different gate stacks
Author :
Moselund, K.E. ; Ghoneim, H. ; Björk, M.T. ; Schmid, H. ; Karg, S. ; Lörtscher, E. ; Riess, W. ; Riel, H.
Author_Institution :
IBM Res. GmbH, Zurich Res. Lab., Ruschlikon, Switzerland
Abstract :
In the present work we demonstrate the fabrication of tunneling field-effect transistors (TFETs) based on VLS grown silicon nanowires (Si NWs). We have integrated two different gate stacks, a conventional one using SiO2 and a HfO2 high-k gate stack. The use of a high-k gate dielectric markedly improves the TFET performance in terms of average slope and on-current, Ion. Furthermore, we investigate the low-temperature behaviour of the TFETs.
Keywords :
elemental semiconductors; field effect transistors; hafnium compounds; high-k dielectric thin films; nanoelectronics; nanofabrication; nanowires; silicon; silicon compounds; tunnel transistors; Si-HfO2; Si-SiO2; TFET; high-k gate dielectric; high-k gate stack; low-temperature behaviour; silicon nanowires; tunnel FET; tunneling field effect transistors; Doping; FETs; Fabrication; Geometry; Helium; High K dielectric materials; High-K gate dielectrics; Nanowires; Temperature; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331446
