GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements

Author

LeClecH, Julien ; Cassidy, Daniel T. ; Biet, Michel ; Laruelle, François ; Bettiati, Mauro ; Landesman, Jean-Pierre

Author_Institution

3S Photonics, Nozay, France

fYear

2010

fDate

26-28 April 2010

Firstpage

1

Lastpage

6

Abstract

GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our model. From there, the impacts of the material and the geometry have been highlighted, and an explanation of the longitudinal variation of the residual mechanical stress is proposed.

Keywords

III-V semiconductors; aluminium compounds; finite element analysis; gallium arsenide; gold alloys; internal stresses; laser modes; photoluminescence; polarisation; semiconductor lasers; stress measurement; tin alloys; wide band gap semiconductors; GaAs-Al₂O₃-AuSn; GaAs-AlN-AuSn; finite element method; material geometry; photoluminescence; polarization; residual mechanical stress; single-mode laser diode bonding-induced stress; submount materials; Bonding; Diode lasers; Geometrical optics; Geometry; Optical materials; Photoluminescence; Polarization; Residual stresses; Solid modeling; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on

Conference_Location

Bordeaux

Print_ISBN

978-1-4244-7026-6

Type

conf

DOI

10.1109/ESIME.2010.5464589

Filename

5464589