Magnetic field induced gate leakage current in 65nm nMOS transistors

Author

Gutiérrez-D, Edmundo A. ; Molina-R, J. ; García-R, P.J. ; Martínez-C, J. ; Guarin, F.

Author_Institution

Dept. of Electron., INAOE, Puebla, Mexico

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

185

Lastpage

188

Abstract

We present experimental evidence that reveals steady state and transient magnetic fields modulate gate current leakage in MOS transistors and produce channel current interference. This steady- and transient-state electromagnetic interference is attributed to surface channel charge and mobility space- and time-modulation, as validated by Minimos-NT electromagnetic numerical simulations.

Keywords

MOSFET; electromagnetic interference; electron mobility; leakage currents; magnetic field effects; Minimos-NT electromagnetic numerical simulation; channel current interference; electromagnetic interference; magnetic field induced gate leakage current; mobility space modulation; nMOS transistor; size 65 nm; steady state magnetic field; surface channel charge; time modulation; transient magnetic field; Current measurement; Electromagnetic transients; Electrons; Interference; Leakage current; MOSFETs; Magnetic field measurement; Magnetic fields; Magnetic modulators; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331452

Filename

5331452