A new analytical GTO-model for circuit applications

Author

Bayer, M. ; Kraus, R. ; Hoffmann, K.

Author_Institution

Univ. of Bundeswehr Munich, Neubiberg, Germany

Volume

2

fYear

1995

fDate

18-22 Jun 1995

Firstpage

879

Abstract

This paper presents an analytical model of a GTO based on the calculation of the charge carrier distribution in the base layers by an approximation of the time derivatives. All essential effects like avalanche breakdown, recombination, backinjection into the high doped emitter and conductivity modulation are included. The reliability of the method is confirmed by a comparison of the simulation and measurement results and by the capability of the model in mastering very complex application circuits

Keywords

approximation theory; avalanche breakdown; circuit analysis computing; digital simulation; electron-hole recombination; power engineering computing; semiconductor device models; semiconductor doping; software packages; thyristors; GTO; Saber; analytical model; approximation; avalanche breakdown; backinjection; base layers; charge carrier distribution; complex application circuits; conductivity modulation; high doped emitter; recombination; reliability; simulation; time derivatives; Analytical models; Charge carriers; Circuit analysis; Circuit simulation; Electrons; Equations; Equivalent circuits; Medical simulation; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-2730-6

Type

conf

DOI

10.1109/PESC.1995.474920

Filename

474920