Electro-thermo-mechanical simulation of automotive MOSFET transistor

Author

Feral, Hervé ; Chauffleur, Xavier ; Fradin, Jean-Pierre

Author_Institution

EPSILON Ing., Labege, France

fYear

2010

fDate

26-28 April 2010

Firstpage

1

Lastpage

5

Abstract

Today, the reliability forecast is a new challenge for the electronic packaging industry. This paper deals with a 3 dimensional electro-thermo-mechanical modeling method for reliability studies of MOSFET transistor. This modeling method increases the accuracy of the thermomechanical computation. The dissipated power mission profile is computed with an electro-thermal co-simulation. The link between chip temperature and dissipated power is modeled for power electronics diodes and MOSFET. Specific MOSFET and diodes temperature dependent models are developed. Modeling method is developed around EPSILON-R3D thermal modeling tool. MODELICA and OpenModelica are used for electric computations. Temperature field is used for the thermo-mechanical study with ANSYS.

Keywords

MOSFET; automobile industry; automotive electronics; electronic engineering computing; electronics packaging; transistors; ANSYS; EPSILON-R3D thermal modeling tool; MODELICA; OpenModelica; automotive MOSFET transistor; dissipated power mission profile; electro-thermo-mechanical simulation; electronic packaging industry; power electronics diodes; reliability forecast; thermomechanical computation; Automotive engineering; Computational modeling; Diodes; Electronics industry; Electronics packaging; MOSFET circuits; Power MOSFET; Power electronics; Temperature; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on

Conference_Location

Bordeaux

Print_ISBN

978-1-4244-7026-6

Type

conf

DOI

10.1109/ESIME.2010.5464597

Filename

5464597