DocumentCode
2360678
Title
New findings on low frequency noise and mismatching properties in uniaxial strained pMOSFETs
Author
Kuo, Jack J Y ; Chen, William P N ; Su, Pin
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
327
Lastpage
330
Abstract
We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.
Keywords
carrier mobility; nanotechnology; power MOSFET; semiconductor device noise; carrier velocity; critical electric field; device mismatch; low-frequency noise; mobility fluctuation; nanoscale pMOSFETs; strained device; tunneling attenuation length; uniaxial strain intrinsic effect; CMOS technology; Frequency measurement; Lifting equipment; Low-frequency noise; MOSFETs; Nanoscale devices; Noise measurement; Silicon; Strain control; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331461
Filename
5331461
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