Impact of La2O3 Thickness on HfO2/La2O3/Ge capacitors and p-channel MOSFETs

Author

Andersson, Caroline ; Sousa, Marilyne ; Marchiori, Chiara ; Webb, David J. ; Caimi, Daniele ; Siegwart, Heinz ; Fompeyrine, Jean ; Rossel, Christophe ; Dimoulas, Athanasios ; Panayiotatos, Yerassimos

Author_Institution

IBM Res. GmbH, Zurich Res. Lab., Rueschlikon, Switzerland

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

173

Lastpage

176

Abstract

In this study we report on HfO₂/La₂O₃/Ge gate stacks grown by MBE with varying thicknesses of La₂O₃ for MOS capacitors and pMOSFETs. Negative threshold voltages, around -0.8 V, in combination with scaled devices with an EOT of 1.4 nm shows good characteristics for the La₂O₃ as a passivation for Ge. Also the effect of various post-metallization anneals in oxygen and forming gas is shown to improve the capacitors and MOSFETs, yielding mobility of 121 cm²/Vs.

Keywords

MOS capacitors; MOSFET; annealing; elemental semiconductors; germanium; hafnium compounds; lanthanum compounds; passivation; HfO₂-La₂O₃-Ge; MOS capacitors; forming gas; gate stacks; mobility; negative threshold voltages; p-channel MOSFET; passivation; post-metallization annealing; Annealing; High K dielectric materials; Laboratories; MOS capacitors; MOSFETs; Oxidation; Passivation; Scalability; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331468

Filename

5331468