• DocumentCode
    2360838
  • Title

    The electret properties of SiO2 films prepared by sol-gel process

  • Author

    Zhongfu, XIA ; Yang, Cao

  • Author_Institution
    Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
  • fYear
    1994
  • fDate
    7-9 Sep 1994
  • Firstpage
    101
  • Lastpage
    106
  • Abstract
    Improved SiO2 electret films prepared by the sol-gel process are described. The electret properties of the SiO2 films, including charge stability, and transport of negatively detrapped charges in the bulk, were studied. Two models were employed to simulate the growth of acid and base catalysed samples. By applying the image processing technique of SEM photography and electrical conductivity glow curves, it was found that the sol-gel oxide for electret purpose should be prepared in the acid system
  • Keywords
    electrets; electrical conductivity; heat treatment; insulating thin films; scanning electron microscopy; silicon compounds; sol-gel processing; thermally stimulated currents; SEM; SiO2; SiO2 films; acid catalysed samples; base catalysed samples; charge stability; electret properties; electrical conductivity glow curve; image processing technique; models; negatively detrapped charge transport; sol-gel process; Aging; Chemicals; Coatings; Electrets; Heat treatment; Human computer interaction; Spinning; Stability; Temperature; Water storage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1994. (ISE 8), 8th International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-1940-0
  • Type

    conf

  • DOI
    10.1109/ISE.1994.514751
  • Filename
    514751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2360838