• DocumentCode
    2360888
  • Title

    On the mechanical properties of Cu3Sn intermetallic compound through molecular dynamics simulation and nanoindentation testing

  • Author

    Chen, Wen-Hwa ; Cheng, Hsien-Chie ; Yu, Ching-Feng

  • Author_Institution
    Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    26-28 April 2010
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Cu3Sn crystal is a well-known intermetallic compound (IMC), which is often observed at the interface of Sn solder and Cu metallization. It is generally recognized as the major cause of the failure of solder bumps and electrodes in microelectronics industry. The aim of the study is to investigate the elastic mechanical properties of orthorhombic Cu3Sn crystal by way of molecular dynamics (MD) simulation and dynamic nanoindentation testing. In the MD simulations, the force field between atoms is modeled with the modified embedded atom method (MEAM). Based on the continuum mechanics assumption, the elastic stiffnesses of the Cu3Sn can be derived from the calculated energy, and then, used in the generalized Hook´s law in compliance form to calculate the associated mechanical properties. Further, using the Voigt-Reuss bounds and Voigt-Reuss-Hill approximation these mechanical properties are averaged for facilitating the comparison with experimental data. Besides, the size-dependent effects on the mechanical properties of the crystal are also assessed. The numerical results show that average bulk modulus, Young´s modulus, shear modulus and Poisson´s ratio of the orthorhombic Cu3Sn crystal are 128.9 GPa, 132.7 GPa, 49.9 GPa and 0.328, and most importantly, they agree very well with our nanoindentation testing results and those published theoretical/experimental data in literature.
  • Keywords
    Poisson ratio; Young´s modulus; continuum mechanics; copper alloys; metallisation; molecular dynamics method; nanoindentation; shear modulus; tin alloys; Cu3Sn; Poisson ratio; Voigt-Reuss bounds; Voigt-Reuss-Hill approximation; Young´s modulus; bulk modulus; continuum mechanics assumption; dynamic nanoindentation testing; elastic mechanical properties; elastic stiffness; force field; generalized Hook´s law; intermetallic compounds; metallization; modified embedded atom method; molecular dynamics simulation; orthorhombic crystal; shear modulus; size-dependent effects; Aerodynamics; Aerospace testing; Bonding; Intermetallic; Lead; Mechanical factors; Microelectronics; Modeling; Soldering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on
  • Conference_Location
    Bordeaux
  • Print_ISBN
    978-1-4244-7026-6
  • Type

    conf

  • DOI
    10.1109/ESIME.2010.5464610
  • Filename
    5464610