Title :
The experimental SAW propagation characteristics of an ion assisted deposited boron nitride film on ST quartz
Author :
Hickernell, Fred S.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
The SAW propagation properties of an ion assisted deposited (IAD) 600 nm boron nitride (BN) film on ST quartz has been characterized experimentally. The BN film was formed by the evaporation of boron bombarded with energetic ions of nitrogen. The SAW propagation properties were measured over a frequency region from 30 MHz to 1.0 GHz with pairs of interdigital transducer electrodes formed on the BN film surface. Velocity dispersion characteristics for the GSAW, PSAW, and HVPSAW modes were determined. For the GSAW mode the velocity increased whereas the velocity decreased for the PSAW mode. The GSAW propagation loss in dB/cm increased as the frequency squared and was 10 dB/cm at 400 MHz. The propagation losses were reduced by a factor of 2 for the PSAW mode with the BN film present as compared to the ST quartz with no film. The amorphous equivalent elastic constants of the BN film were estimated and fell well below those of cubic BN. Optical spectra, FTIR, and AFM measurements were made to better define film composition and structure
Keywords :
boron compounds; dielectric thin films; ion beam assisted deposition; piezoelectric materials; quartz; surface acoustic waves; 30 MHz to 1.0 GHz; AFM; BN; FTIR spectra; GSAW mode; HVPSAW mode; PSAW mode; SAW propagation; ST quartz; SiO2; boron nitride film; elastic constants; interdigital transducer electrode; ion assisted deposition; optical spectra; piezoelectric substrate; propagation loss; velocity dispersion; Amorphous materials; Atom optics; Atomic force microscopy; Boron; Frequency; Nitrogen; Optical films; Optical microscopy; Piezoelectric films; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991603
