DocumentCode
2360922
Title
Amorphous covalent dielectrics-new category of materials
Author
Tyczkowski, Jacek ; Kazimierski, Piotr
Author_Institution
Centre of Molecular & Macromolecular Studies, Polish Acad. of Sci., Lodz, Poland
fYear
1994
fDate
7-9 Sep 1994
Firstpage
130
Lastpage
135
Abstract
The concept of amorphous covalent dielectrics is presented. It is shown that plasma-deposited Si-C and Ge-C films exist in two qualitatively different groups. The first group consists of typical amorphous semiconductors while the second one is categorized as amorphous dielectrics. The most important feature distinguishing one group from another is the lack of extended states in the dielectrics
Keywords
amorphous semiconductors; amorphous state; dielectric materials; dielectric thin films; germanium compounds; localised states; plasma deposited coatings; semiconductor thin films; silicon compounds; Ge-C; Si-C; amorphous covalent dielectrics; lack of extended states; plasma-deposited Ge-C films; plasma-deposited Si-C films; Amorphous materials; Charge carrier processes; Chemical vapor deposition; Dielectric materials; Dielectric thin films; Glass; Plasma materials processing; Polymers; Semiconductor films; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1994. (ISE 8), 8th International Symposium on
Conference_Location
Paris
Print_ISBN
0-7803-1940-0
Type
conf
DOI
10.1109/ISE.1994.514756
Filename
514756
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