Title :
AC simulation aspects of MOS modeling
Author_Institution :
Gilgamesh Assoc., Fletcher, VT, USA
Abstract :
Most discussions of MOS modeling concentrate on DC current descriptions. However, in real circuits, modeling of AC components is of great importance, and this topic receives much less attention than it deserves. This paper examines these issues in detail, noting various shortcomings and methods of overcoming them
Keywords :
MOSFET; capacitance; semiconductor device models; simulation; AC simulation; MOS modeling; MOSFET structure; charge conservation; gate capacitance; junction capacitance; Capacitance; Capacitors; Circuit simulation; Equivalent circuits; FETs; MOSFET circuits; P-n junctions; SPICE; Semiconductor process modeling; Voltage;
Conference_Titel :
Northcon/98 Conference Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5075-8
DOI :
10.1109/NORTHC.1998.731534
