Title :
High performance Ga2O3(Gd2O3)/Ge MOS devices without interfacial layers
Author :
Chu, L.K. ; Chu, R.L. ; Huang, M.L. ; Tung, L.T. ; Lin, T.D. ; Chang, C.C. ; Kwo, J. ; Hong, M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Excellent electrical performances have been demonstrated for the MOSCAPs and MOSFETs using Ga2O3(Gd2O3) gate dielectrics deposited at room temperature on Ge(100) without employing any interfacial layers. In this work, we report a very low interfacial density of state (Dit) of ~2times1011cm-2 eV-1, a low leakage current density (Jg) of ~10-9A/cm2, well-behaved capacitance-voltage (C-V) characteristics including an excellent quasi-static C-V curve along with a high efficiency of 80% for the Fermi-level movement near the mid-gap. In addition, a high saturation drain current and a high transconductance of 496 muA/mum and 178 muS/mum, respectively, for the 1 mum-gate-length device have been obtained as well.
Keywords :
Fermi level; MOS capacitors; MOSFET; current density; dielectric materials; electronic density of states; elemental semiconductors; gadolinium compounds; gallium compounds; germanium; leakage currents; semiconductor materials; Fermi-level movement; Ga2O3-Ge; Gd2O3-Ge; MOS capacitors; MOS devices; MOSCAPs; MOSFETs; capacitance-voltage characteristics; gate dielectric deposition; interfacial density-of-state; leakage current density; saturation drain current; size 1 mum; temperature 293 K to 298 K; transconductance; Annealing; CMOS technology; Capacitance-voltage characteristics; Chemical analysis; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Passivation; Plasma temperature;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331480
