Title :
Application of SiC-JFETs in current source inverter topologies
Author :
Koch, I. ; Hinrichsen, F. ; Canders, W.-R.
Author_Institution :
Inst. for Electr. Machines, Traction & Drives, Technische Univ. Braunschweig
Abstract :
SiC-JFETs are promising for many future applications but have a normally-on behaviour, which usually necessitates an auxiliary MOSFET to achieve self-blocking capability. However this characteristic is predestinated to current source inverter topologies as an attractive alternative for fast switching applications. The paper presents practical investigations of SiC-JFETs with a modified driver stage in a current source inverter and for comparison in a voltage source inverter topology. Measurement results of both topologies at a frequency of 250 kHz are included. Furthermore differences in the minimising of switching losses for each topology are shown
Keywords :
MOSFET; driver circuits; junction gate field effect transistors; network topology; silicon compounds; switching convertors; wide band gap semiconductors; 250 kHz; JFET; SiC; auxiliary MOSFET; current source inverter topology; self-blocking capability; switching applications; switching losses; voltage source inverter topology; Circuit topology; Diodes; Inverters; MOSFET circuits; Power electronics; Semiconductor materials; Silicon carbide; Switches; Switching loss; Voltage; JFET; SiC-device; current source inverter (CSI); device application; silicon carbide;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219542