Title :
Manufacturing and reliability improvements in metal-oxide-metal capacitors-MOMCAPs
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Abstract :
Metal-oxide-metal capacitors (MOMCAPs) have historically demonstrated less than optimal leakage and breakdown characteristics and yields. Additionally, the Cpk for capacitance is low. Any previous work done to improve the dielectric uniformity has resulted in further degradation of the capacitor characteristics. In this paper, we show that the parametric and reliability characteristics are very dependent on the bottom plate material. Our standard Ti bottom plate interacts with the capacitor dielectric, resulting in degraded performance. That interaction renders a more uniform dielectric film unusable. We have developed a MOMCAP using TiW as the bottom plate electrode, which minimizes those interactions and improves the capacitor characteristics
Keywords :
MIM devices; capacitance; capacitors; electric breakdown; electrodes; electron device manufacture; leakage currents; metallisation; reliability; titanium alloys; tungsten alloys; MOMCAPs; SiO2-Ti; SiO2-TiW; Ti; Ti bottom plate material; TiW; TiW bottom plate electrode; breakdown characteristics; capacitance; capacitor characteristics; capacitor degradation; capacitor dielectric; capacitor manufacturing; capacitor reliability; dielectric uniformity; leakage characteristics; metal-oxide-metal capacitors; optimal yield; parametric characteristics; peak capacitance; reliability characteristics; standard Ti bottom plate; uniform dielectric film; Capacitance; Capacitors; Degradation; Dielectric films; Electrodes; Manufacturing; Optical films; Plasma temperature; Testing; Wet etching;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731550