• DocumentCode
    2361270
  • Title

    Charge distributions in electron-beam irradiated Kapton PI and Teflon FEP films

  • Author

    Yang, G.M. ; Sessler, G.M.

  • Author_Institution
    Inst. for Electroacoust., Tech. Univ. Darmstadt, Germany
  • fYear
    1994
  • fDate
    7-9 Sep 1994
  • Firstpage
    248
  • Lastpage
    253
  • Abstract
    Charge distributions in 25 μm thick films of Kapton PI and Teflon FEP, charged with 20 and 30 keV electron beams, are measured with the laser-induced pressure-pulse (LIPP) method directly after charging or after additional annealing periods at 120°C. The charge distributions show changes with annealing time which suggest slow and fast retrapping, with Schubwegs at 120°C of >20 μm and ~5 μm for PI and FEP, respectively. Corresponding μτ-products are >6×10-9 and ~10-9 cm2/V
  • Keywords
    annealing; carrier density; carrier mobility; dielectric thin films; electrets; electric breakdown; electron beam effects; polymer films; 120 C; 20 keV; 25 mum; 30 keV; Kapton PI film; Teflon FEP film; annealing periods; charge distributions; electron-beam irradiated; laser-induced pressure-pulse method; retrapping; Annealing; Charge measurement; Current measurement; Electrodes; Electron beams; Laser beam cutting; Laser mode locking; Pulse amplifiers; Pulsed laser deposition; Surface charging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1994. (ISE 8), 8th International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-1940-0
  • Type

    conf

  • DOI
    10.1109/ISE.1994.514776
  • Filename
    514776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2361270