Title :
Residual gases investigation for eliminating contamination in LPCVD Si3N4 process
Author :
Zhang, N. ; Magloczki, G. ; Aumick, S. ; Chiusano, G. ; Beckett, S. ; Nicholls, G. ; Stearns, L.
Author_Institution :
MiCRUS, Hopewell Junction, NY, USA
Abstract :
Although Si3N4 films in integrated circuit (IC) fabrication have almost 30 years of history, process engineers still face the challenge of meeting ever-tighter process control requirements, essentially for particle contamination. This paper presents the benefits of implementing an in-situ RGA technique, including reduction of NH4Cl or SixNyCl z condensation and improvement of tool availability
Keywords :
chemical analysis; chemical vapour deposition; condensation; dielectric thin films; integrated circuit testing; integrated circuit yield; passivation; process control; reduction (chemical); silicon compounds; surface contamination; IC fabrication; LPCVD Si3N4 process; NH4Cl; NH4Cl reduction; Si3N4; Si3N4 films; SixNyClz condensation; SiNCl; contamination elimination; in-situ RGA technique; integrated circuit fabrication; particle contamination; process control requirements; process engineers; residual gases; tool availability; Contamination; Fabrication; Gases; History; Inductors; Process control; Semiconductor films; Silicon; Temperature; Valves;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731565
