Comparison between 65nm bulk and PD-SOI MOSFETs: Si/BOX interface effect on point defects and doping profiles

Author

Bazizi, E.M. ; Pakfar, A. ; Fazzini, P.F. ; Cristiano, F. ; Tavernier, C. ; Claverie, A. ; Burenkov, Alex ; Pichler, Peter

Author_Institution

STMicroelectronics, Crolles, France

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

292

Lastpage

295

Abstract

In this work, the influence of the Silicon/Buried Oxide Interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the state-of-art dopant diffusion models and the effect of Si/BOX interface as a point defect sink, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX interface on the shape of the different active zones profiles was investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.

Keywords

MOSFET; buried layers; diffusion; doping profiles; elemental semiconductors; numerical analysis; point defects; semiconductor doping; silicon; silicon-on-insulator; CMOS devices; PD-SOI MOSFET; Si; active zones profiles; bulk MOSFET; dopant diffusion models; dopant impurity; dopant lateral diffusion profiles; electrical characteristics; numerical simulations; point defect; silicon-buried oxide interface effect; silicon-on-insulator; size 65 nm; two-dimensional diffusion; Circuits; Doping profiles; Electrostatics; FETs; MOSFETs; Piezoresistance; Resonance; Signal analysis; Vibrations; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331510

Filename

5331510