Title :
Uses of corona oxide silicon (COS) measurements for diffusion process monitoring and troubleshooting
Author :
Cosway, Richard G. ; Catmull, Kelvin B. ; Shray, Janie ; Naujokaitis, Robert ; Peters, Megan ; Grant, Don ; Horner, G. ; Letherer, Brian
Author_Institution :
Motorola Inc., Chandler, AZ, USA
Abstract :
The dynamic nature of modern semiconductor fabrication facilities requires metrology tools that can be used to diagnose infrequent problems. However, due to the high cost of clean room floor space, these tools should also provide routine monitoring capability and be able to diagnose numerous issues. For a diffusion area, the corona oxide silicon (COS) measurement technique lends itself well to double duty as both an engineering and production tool
Keywords :
clean rooms; corona; dielectric thin films; diffusion; integrated circuit measurement; ionisation; process monitoring; silicon compounds; COS measurements; Si; SiO2-Si; clean room floor space cst; corona oxide silicon measurements; diffusion area; diffusion process monitoring; diffusion process troubleshooting; engineering tool; metrology tools; monitoring capability; production tool; semiconductor fabrication facilities; Charge measurement; Corona; Costs; Current measurement; Dielectric measurements; Electric variables measurement; Furnaces; Monitoring; Silicon; Vibration measurement;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731569
