O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

Author

Rothschild, A. ; Breuil, L. ; Van den Bosch, G. ; Richard, O. ; Conard, T. ; Franquet, A. ; Cacciato, A. ; Debusschere, I. ; Jurczak, M. ; Van Houdt, J. ; Kittl, J.A. ; Ganguly, U. ; Date, L. ; Boelen, P. ; Schreutelkamp, R.

Author_Institution

IMEC vzw, Leuven, Belgium

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

272

Lastpage

275

Abstract

TANOS Charge Trap Flash Approach (CTF) is a candidate to replace floating gate approach (FG) for sub-32 nm technology node. However the main challenge for TANOS is its poor retention characteristics. In this paper, we show that by performing an O₂ anneal after Al₂O₃ deposition the charge retention is considerably improved as well as the other memory characteristics: program, erase, endurance.

Keywords

alumina; aluminium compounds; annealing; flash memories; reliability; silicon compounds; tantalum compounds; TANOS charge trap flash approach; TANOS flash memory; TaN-Al₂O₃-Si₃N₄-SiO₂; blocking dielectrics; charge retention; floating gate approach; postdeposition annealing; reliability; size 32 nm; Annealing; Artificial intelligence; Capacitors; Dielectric materials; Flash memory; Material properties; Nonvolatile memory; Robustness; Thermal degradation; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331523

Filename

5331523