Investigation of the performance of strained-SiGe vertical IMOS-transistors

A vertical IMOS transistor with a thin layer of strained SiGe in the impact ionization region near the drain is investigated by full-band Monte Carlo and hydrodynamic simulations for the first time. An anisotropic impact ionization model for strained SiGe based on the constant matrix approximation is applied in the Monte Carlo simulations. The results show that the reduced bandgap of the strained SiGe layer near the drain end of the channel could increase the impact ionization rate and thus improve the performance of the vertical IMOS.