Thermal effects modeling of multi-fingered MOSFETs based on new specific test structures

Author

Hniki, S. ; Bertrand, G. ; Ortolland, S. ; Minondo, M. ; Rauber, B. ; Raynaud, C. ; Giry, A. ; Bon, O. ; Jaouen, H. ; Morancho, F.

Author_Institution

STMicroelectronics FRANCE, Crolles, France

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

296

Lastpage

299

Abstract

New powerful specific test structures are proposed to characterize the thermal resistance R_th of multi-fingered structures including side and thermal coupling effects. The benefit of such structures over standard ones is clearly demonstrated. Thanks to an original method, the derived R_th model is introduced in an NLDMOS SOI macromodel. The global HV model is able to reproduce the DC characteristics of small (widthLt200 um) devices as well as the ones large multi-fingered devices (PA power cell with 1 mm width) without any model adjustments. This method will improve compact modeling approach for multi-fingered devices (HV or not) impacted by self-heating.

Keywords

MOSFET; semiconductor device models; semiconductor device testing; MOSFET; NLDMOS SOI macromodel; PA power cell; multi-fingered structures; self-heating; side coupling effects; specific test structures; thermal coupling effects; thermal effects modeling; thermal resistance; Calibration; Indium phosphide; MOSFETs; Roentgenium; Semiconductor device modeling; Temperature; Testing; Thermal conductivity; Thermal resistance; Uninterruptible power systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331544

Filename

5331544