Title :
Thermal effects modeling of multi-fingered MOSFETs based on new specific test structures
Author :
Hniki, S. ; Bertrand, G. ; Ortolland, S. ; Minondo, M. ; Rauber, B. ; Raynaud, C. ; Giry, A. ; Bon, O. ; Jaouen, H. ; Morancho, F.
Author_Institution :
STMicroelectronics FRANCE, Crolles, France
Abstract :
New powerful specific test structures are proposed to characterize the thermal resistance Rth of multi-fingered structures including side and thermal coupling effects. The benefit of such structures over standard ones is clearly demonstrated. Thanks to an original method, the derived Rth model is introduced in an NLDMOS SOI macromodel. The global HV model is able to reproduce the DC characteristics of small (widthLt200 um) devices as well as the ones large multi-fingered devices (PA power cell with 1 mm width) without any model adjustments. This method will improve compact modeling approach for multi-fingered devices (HV or not) impacted by self-heating.
Keywords :
MOSFET; semiconductor device models; semiconductor device testing; MOSFET; NLDMOS SOI macromodel; PA power cell; multi-fingered structures; self-heating; side coupling effects; specific test structures; thermal coupling effects; thermal effects modeling; thermal resistance; Calibration; Indium phosphide; MOSFETs; Roentgenium; Semiconductor device modeling; Temperature; Testing; Thermal conductivity; Thermal resistance; Uninterruptible power systems;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331544
