Title :
A novel self-refreshable capacitorless DRAM cell
Author :
Wang, Peng-Fei ; Yi Gong ; Zhang, Shi-Li
Author_Institution :
Oriental Semicond. Co., Ltd., Suzhou, China
Abstract :
A novel DRAM cell based on floating gate (FG) concept is investigated. Compared to the conventional two-transistor FG DRAM cells, this new memory cell has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated diode and state ldquo1rdquo can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the nondestructive read are discussed.
Keywords :
DRAM chips; nondestructive testing; floating gate concept; nondestructive read; self-refreshable capacitorless DRAM cell; Capacitance; Leakage current; MOSFETs; Microelectronics; Nonvolatile memory; Physics; Random access memory; Semiconductor diodes; Substrates; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331545
