DocumentCode
2362223
Title
A novel self-refreshable capacitorless DRAM cell
Author
Wang, Peng-Fei ; Yi Gong ; Zhang, Shi-Li
Author_Institution
Oriental Semicond. Co., Ltd., Suzhou, China
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
113
Lastpage
116
Abstract
A novel DRAM cell based on floating gate (FG) concept is investigated. Compared to the conventional two-transistor FG DRAM cells, this new memory cell has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated diode and state ldquo1rdquo can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the nondestructive read are discussed.
Keywords
DRAM chips; nondestructive testing; floating gate concept; nondestructive read; self-refreshable capacitorless DRAM cell; Capacitance; Leakage current; MOSFETs; Microelectronics; Nonvolatile memory; Physics; Random access memory; Semiconductor diodes; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331545
Filename
5331545
Link To Document