Title :
Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Author :
Lin, T.D. ; Chiu, H.C. ; Chang, P. ; Chang, Y.H. ; Lin, C.A. ; Chang, W.H. ; Kwo, J. ; Tsai, W. ; Hong, M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
High-performance self-aligned inversion-channel In0.75Ga0.25As n-MOSFETs using in-situ ultra-high-vacuum (UHV) deposited Al2O3/Ga2O3(Gd2O3) and ex-situ atomic-layer-deposited (ALD) Al2O3 as gate dielectrics have been fabricated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. A 1.2 mum-gate-length In0.75Ga0.25As MOSFET using Al2O3(2 nm-thick)/GGO(13 nm-thick) dual-layer gate dielectric demonstrated a maximum drain current of 970 muA/mum, a peak transconductance of 410 muS/mum, and a peak mobility of 1560 cm2/Vmiddots. A maximum drain current of 194 muA/mum and a peak transconductance of 126 muS/mum were exhibited by a 2 mum-gate-length In0.75Ga0.25As MOSFET using ALD-Al2O3(6 nm-thick).
Keywords :
MOSFET; semiconductor device manufacture; Al2O3-Ga2O3(Gd2O3); In0.75Ga0.25As; MOSFET; atomic-layer; drain currents; gate dielectrics; self-aligned inversion-channel; size 1.2 mum; transconductances; ultra-high-vacuum; Atomic layer deposition; Dielectric materials; Gallium arsenide; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide; MOS devices; MOSFETs; Network address translation; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331557
