Title :
New laser and detector structures for mid-infrared
Author :
Joullie, A. ; Christol, P. ; Rodriguez, J.B. ; Ait-Kaci, Hassan ; Chevrier, F.
Author_Institution :
Centre d´Electronique et de Micro-optoelectronique de Montpellierr, Montpellier Univ., France
Abstract :
The paper presents an overview of semiconductor laser and detector structures for the mid-infrared wavelength range (3-5 μm). Recent progress in new laser systems are described : intersubband quantum cascade lasers (QCLs), interband "W" lasers, and interband quantum cascade lasers (ICLs). All these laser structures employing AlSb, InAs, GaSb and related alloys have the potentiality to reach the challenges of room temperature operation in continuous wave for modern applications. The description of detector structures is focussed on intersubband transition systems based on type-II InAs/GaSb superlattices or InSb/GaSb quantum dots.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared detectors; photodetectors; quantum cascade lasers; reviews; semiconductor quantum dots; semiconductor superlattices; GaInAs-AlInAs; ICL; InAs-AlSb; InAs-GaSb; InSb-GaSb; InSb/GaSb quantum dots; QCL; detector structures; interband W lasers; interband quantum cascade lasers; intersubband quantum cascade lasers; intersubband transition systems; mid-infrared wavelength range; room temperature operation; type-II InAs/GaSb superlattices; Gas lasers; Infrared detectors; Laser modes; Laser transitions; Optical superlattices; Quantum cascade lasers; Quantum dot lasers; Semiconductor lasers; Semiconductor superlattices; Temperature;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Print_ISBN :
0-7803-7948-9
DOI :
10.1109/CAOL.2003.1250502
