Accurate behavioural modelling of power MOSFETs based on device measurements and FE-simulations

Author

Elferich, Reinhold ; Lopez, Toni ; Koper, Nick

Author_Institution

Philips Res. Lab., Aachen

fYear

2005

fDate

11-14 Sept. 2005

Abstract

Optimization of low voltage power MOSFETs in hard-switching high frequency power converters needs accurate models. This paper deals with a behavioural modelling approach, which employs look-up tables and fitting functions describing the device´s characteristics. The required model data can be derived from extensive measurements or alternatively, from finite element (FE) device simulations. Both ways are outlined and compared. A simulation example of a step-down converter shows a typical switching transient and demonstrates the effects covered by the model

Keywords

finite element analysis; power MOSFET; switching convertors; table lookup; FE-simulations; behavioural modelling approach; device measurements; finite element device; fitting functions; hard-switching high frequency power converters; lookup tables; power MOSFET; step-down converter; switching transients; Capacitance; Circuit simulation; DC-DC power converters; Electrical resistance measurement; Frequency conversion; Low voltage; MOSFETs; Power measurement; Switching converters; Transient analysis; Device characterisation; Device modelling; Discrete power device; High frequency power converter; MOSFET; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219640

Filename

1665830