Accurate behavioural modelling of power MOSFETs based on device measurements and FE-simulations

Optimization of low voltage power MOSFETs in hard-switching high frequency power converters needs accurate models. This paper deals with a behavioural modelling approach, which employs look-up tables and fitting functions describing the device´s characteristics. The required model data can be derived from extensive measurements or alternatively, from finite element (FE) device simulations. Both ways are outlined and compared. A simulation example of a step-down converter shows a typical switching transient and demonstrates the effects covered by the model