DocumentCode
2363112
Title
A trench IGBT distributed model with thermo-sensible parameters
Author
De Maglie, R. ; Austin, P. ; Mussard, L. ; Sanchez, J.-L. ; Elghazouani, M. ; Richardeau, F. ; Schanen, J.-L.
Author_Institution
Laboratoire d´Analyses et d´Architecture des Syst., Toulouse
fYear
2005
fDate
11-14 Sept. 2005
Abstract
In this paper, a one-dimensional physical model with thermally dependent parameters of the trench insulated gate bipolar transistor (TIGBT) is presented. This model is implemented in the Saber simulator in MAST language. Simulation and experimental results are compared for different temperatures in order to validate the model in adiabatic conditions
Keywords
insulated gate bipolar transistors; Saber simulator; one-dimensional physical model; thermosensible parameters; trench IGBT distributed model; trench insulated gate bipolar transistor; Buffer layers; Electronic mail; Electronics industry; Insulated gate bipolar transistors; Laboratories; Power electronics; Space charge; Temperature; Thyristors; Voltage; Device modelling; IGBT; Power semiconductor device;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219649
Filename
1665839
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