Heterostructure barrier quantum well varactor

Author

Duez, V. ; Mélique, X. ; Havart, R. ; Podevin, F. ; Mounaix, P. ; Mollot, F. ; Vanbésien, O. ; Lippens, D.

Author_Institution

Inst. d´´Electron. et du Micro-Electron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France

fYear

1998

fDate

3-4 Sep 1998

Firstpage

62

Lastpage

65

Abstract

In this paper, we report on recent developments in multiplier technology using heterostructure barrier varactors. From the epitaxial point of view, the originality stems from a new device configuration based on a quantum-well/barrier scheme. Test samples were fabricated either in GaAs or in InP technology and exhibit significant improvements in terms of capacitance ratio (in excess of 10:1) and capacitance nonlinearity. On the other hand, we discuss other competing technologies notably planar-doped heterostructure barrier varactors

Keywords

capacitance; frequency multipliers; gallium arsenide; indium compounds; quantum well devices; submillimetre wave diodes; varactors; GaAs; GaAs technology; InP; InP technology; capacitance nonlinearity; capacitance ratio; heterostructure barrier QW varactor; multiplier technology; planar-doped HBV; quantum well varactor; Doping; Electrons; Gallium arsenide; Indium phosphide; Linearity; Molecular beam epitaxial growth; Quantum capacitance; Submillimeter wave technology; Testing; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731664

Filename

731664