Title :
Heterostructure barrier quantum well varactor
Author :
Duez, V. ; Mélique, X. ; Havart, R. ; Podevin, F. ; Mounaix, P. ; Mollot, F. ; Vanbésien, O. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et du Micro-Electron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Abstract :
In this paper, we report on recent developments in multiplier technology using heterostructure barrier varactors. From the epitaxial point of view, the originality stems from a new device configuration based on a quantum-well/barrier scheme. Test samples were fabricated either in GaAs or in InP technology and exhibit significant improvements in terms of capacitance ratio (in excess of 10:1) and capacitance nonlinearity. On the other hand, we discuss other competing technologies notably planar-doped heterostructure barrier varactors
Keywords :
capacitance; frequency multipliers; gallium arsenide; indium compounds; quantum well devices; submillimetre wave diodes; varactors; GaAs; GaAs technology; InP; InP technology; capacitance nonlinearity; capacitance ratio; heterostructure barrier QW varactor; multiplier technology; planar-doped HBV; quantum well varactor; Doping; Electrons; Gallium arsenide; Indium phosphide; Linearity; Molecular beam epitaxial growth; Quantum capacitance; Submillimeter wave technology; Testing; Varactors;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731664
