Title :
Recent advances in the performance of InP gunn devices for the 100-300-GHz frequency range
Author :
Eisele, Heribert ; Rydberg, Anders ; Haddad, George I.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Improved heat dissipation in InP Gunn devices resulted in RF power levels exceeding 200 mW, 130 mW, 80 mW, and 25 mW at oscillation frequencies of around 103 GHz, 132 GHz, 152 GHz, and 162 GHz, respectively. Corresponding DC-to-RF conversion efficiencies exceeded 2.3% between 102 GHz and 132 GHz. Power combining increased the available RF power levels to more than 300 mW at 106 GHz, around 130 mW at 136 GHz, and more than 125 mW at 152 GHz with corresponding combining efficiencies from 80% to more than 100%. Operation in a second-harmonic mode yielded RF power levels of more than 2 mW around 220 GHz and more than 1 mW around 280 GHz
Keywords :
Gunn diodes; Gunn oscillators; III-V semiconductors; harmonics; indium compounds; millimetre wave diodes; millimetre wave generation; millimetre wave oscillators; phase noise; power combiners; submillimetre wave diodes; submillimetre wave generation; submillimetre wave oscillators; 1 to 300 mW; 100 to 300 GHz; 2.3 to 100 percent; DC-to-RF conversion efficiencies; InP; InP Gunn devices; RF power levels; heat dissipation improvement; power combining; second-harmonic mode operation; Circuits; Gunn devices; Heat sinks; Indium phosphide; Oscillators; Phase noise; Power generation; Radio frequency; Resistance heating; Temperature;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731665
