DocumentCode
236358
Title
Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (système international)
Author
Fletcher, Nick ; Rietveld, Gert ; Olthoff, James ; Budovsky, Ilya
Author_Institution
BIPM, Sèvres, France
fYear
2014
fDate
24-29 Aug. 2014
Firstpage
432
Lastpage
433
Abstract
This paper considers the impact of the planned redefinition of the SI on electrical traceability, with a focus on resistance and voltage calibration. The new SI will replace the 1990 values for the critical constants RK and KJ. With the present state of experimental data, we can say with good confidence that the required relative changes will be of order the 2 × 10-8 for RK and 10 × 10-8 for KJ. These changes will only be visible for a small number of top-level standards in NMIs and industry. Thus, no disruption in traceability is anticipated due to this change, and this paper is part of a communication campaign by the CCEM to ensure a smooth transition.
Keywords
calibration; electric resistance measurement; measurement standards; voltage measurement; CCEM; NMI; SI; Système International; critical constant KJ; critical constant RK; electrical traceability; measurement standard; resistance calibration; resistance traceability; voltage calibration; voltage traceability; Calibration; Metrology; NIST; Resistance; Silicon; Uncertainty; SI; electrical units; fundamental constants; resistance; traceability; voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location
Rio de Janeiro
ISSN
0589-1485
Print_ISBN
978-1-4799-5205-2
Type
conf
DOI
10.1109/CPEM.2014.6898444
Filename
6898444
Link To Document