Title :
Potential-tunable quantum dot single-electron pump
Author :
Ye-Hwan Ahn ; Minky Seo ; Youngheon Oh ; Yunchul Chung ; Myung-Ho Bae ; In-Ho Lee ; Nam Kim
Author_Institution :
Dept. of Phys., Korea Univ., Seoul, South Korea
Abstract :
We have investigated a metal-gated QD charge pump device whose potential profile can be controlled. The proposed pump is uniquely designed with several metallic gates on a GaAs/AlGaAs two-dimensional electron gas system. We find that the length of 1st current plateau depends on potential profile of the QD. Under optimal conditions, a quantized current plateau with estimated accuracy of ppm level for the output current of ~80 pA at 500 MHz is observed at 4.2 K in the absence of magnetic fields.
Keywords :
III-V semiconductors; aluminium compounds; electric potential; gallium arsenide; measurement standards; semiconductor quantum dots; single electron devices; two-dimensional electron gas; GaAs-AlGaAs; frequency 500 MHz; measurement standards; metal-gated QD charge pump device; potential profile; potential-tunable quantum dot single-electron pump; temperature 4.2 K; two-dimensional electron gas system; Accuracy; Electric potential; HEMTs; Logic gates; MODFETs; Magnetosphere; Quantum dots; Measurement; current; measurement standards;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4799-5205-2
DOI :
10.1109/CPEM.2014.6898446
