Title :
Quantum well structures for THz bandwidth near-infrared unipolar semiconductor lasers
Author :
Cheung, C.Y.L. ; Rees, P. ; Shore, K.A.
Author_Institution :
Sch. of Electron. Eng. & Comput. Sci., Univ. of Wales, Bangor, UK
Abstract :
Intersubband semiconductor lasers provide possibilities for obtaining compact laser sources in the mid-infrared (MIR) spectral region. The dynamical behaviour of such lasers is governed by electron lifetimes, which are typically of order 1 ps in coupled quantum well structures. In the present paper, attention is given to the design of a near-infrared unipolar semiconductor laser with a lasing wavelength of 1.55 μm. Calculations have been undertaken of the optical gain spectra of this structure and compared to that of a similiar MIR structure. In addition, it has been found that very high direct-current modulation bandwidths would be achievable in these lasers
Keywords :
carrier lifetime; laser transitions; optical modulation; quantum well lasers; 1 ps; 1.55 micrometre; compact laser sources; coupled quantum well structures; direct-current modulation bandwidths; dynamical behaviour; electron lifetimes; intersubband semiconductor lasers; lasing wavelength; mid-infrared spectral region; near-infrared unipolar semiconductor lasers; optical gain spectra; quantum well structures; Bandwidth; Electrons; Equations; Laser modes; Matrices; Optical modulation; Optical scattering; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731669
