Solidly mounted resonators with layer-transferred AlN using sacrificial crystalline surfaces

Author

Allah, Mohamed Abd ; Thalhammer, Robert ; Kaitila, Jyrki ; Herzog, Thomas ; Weber, Werner ; Schmitt-Landsiedel, Doris

Author_Institution

Lehrstuhl fur Tech. Elektron., Tech. Univ. Munchen, Munich, Germany

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

375

Lastpage

378

Abstract

A new process to manufacture solidly mounted bulk acoustic wave resonators using wafer bonding and sacrificial surface removal is introduced. With this process, AlN thin films are obtained having excellent c-axis orientation with XRD rocking curve FWHM of 1.36deg and material electromechanical coupling constant of 6.8% exceeding the epitaxial AlN electromechanical coupling constant. The resonators are working around 2.35 GHz and have Q-values as high as ~1300.

Keywords

acoustic waves; aluminium compounds; joining processes; resonators; semiconductor device manufacture; semiconductor thin films; wafer bonding; AlN; electromechanical coupling; layer-transferred AlN; sacrificial crystalline surfaces; solidly mounted bulk acoustic wave resonators; thin films; wafer bonding; Acoustic devices; Acoustic waves; Crystallization; Electrodes; Mirrors; Resonance; Resonant frequency; Resonator filters; Surface acoustic waves; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331616

Filename

5331616