DocumentCode
236368
Title
Effects of electrostatic confinement in a silicon single-electron pump
Author
Rossi, Anna ; Tanttu, T. ; Tan, K.Y. ; Zhao, Rong ; Chan, Ka Wing ; Iisakka, I. ; Tettamanzi, G.C. ; Rogge, S. ; Mottonen, M. ; Dzurak, A.S.
Author_Institution
Sch. of Electr. Eng. & Telecommun., Univ. of New South Wales, Sydney, NSW, Australia
fYear
2014
fDate
24-29 Aug. 2014
Firstpage
440
Lastpage
441
Abstract
Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.
Keywords
charge pump circuits; elemental semiconductors; measurement standards; nanoelectronics; semiconductor quantum dots; silicon; single electron devices; Si; electrostatic confinement; gate electrodes; nanoscale single-electron pumps; pumping mechanism; silicon quantum dot; tunable tunnel barriers; Current measurement; Educational institutions; Electrostatics; Logic gates; Quantum dots; Silicon; Uncertainty; Charge pumping; electrical current standard; quantum dot; silicon; single-electron pump;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location
Rio de Janeiro
ISSN
0589-1485
Print_ISBN
978-1-4799-5205-2
Type
conf
DOI
10.1109/CPEM.2014.6898448
Filename
6898448
Link To Document