DocumentCode :
236368
Title :
Effects of electrostatic confinement in a silicon single-electron pump
Author :
Rossi, Anna ; Tanttu, T. ; Tan, K.Y. ; Zhao, Rong ; Chan, Ka Wing ; Iisakka, I. ; Tettamanzi, G.C. ; Rogge, S. ; Mottonen, M. ; Dzurak, A.S.
Author_Institution :
Sch. of Electr. Eng. & Telecommun., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2014
fDate :
24-29 Aug. 2014
Firstpage :
440
Lastpage :
441
Abstract :
Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.
Keywords :
charge pump circuits; elemental semiconductors; measurement standards; nanoelectronics; semiconductor quantum dots; silicon; single electron devices; Si; electrostatic confinement; gate electrodes; nanoscale single-electron pumps; pumping mechanism; silicon quantum dot; tunable tunnel barriers; Current measurement; Educational institutions; Electrostatics; Logic gates; Quantum dots; Silicon; Uncertainty; Charge pumping; electrical current standard; quantum dot; silicon; single-electron pump;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
ISSN :
0589-1485
Print_ISBN :
978-1-4799-5205-2
Type :
conf
DOI :
10.1109/CPEM.2014.6898448
Filename :
6898448
Link To Document :
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