• DocumentCode
    236368
  • Title

    Effects of electrostatic confinement in a silicon single-electron pump

  • Author

    Rossi, Anna ; Tanttu, T. ; Tan, K.Y. ; Zhao, Rong ; Chan, Ka Wing ; Iisakka, I. ; Tettamanzi, G.C. ; Rogge, S. ; Mottonen, M. ; Dzurak, A.S.

  • Author_Institution
    Sch. of Electr. Eng. & Telecommun., Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2014
  • fDate
    24-29 Aug. 2014
  • Firstpage
    440
  • Lastpage
    441
  • Abstract
    Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.
  • Keywords
    charge pump circuits; elemental semiconductors; measurement standards; nanoelectronics; semiconductor quantum dots; silicon; single electron devices; Si; electrostatic confinement; gate electrodes; nanoscale single-electron pumps; pumping mechanism; silicon quantum dot; tunable tunnel barriers; Current measurement; Educational institutions; Electrostatics; Logic gates; Quantum dots; Silicon; Uncertainty; Charge pumping; electrical current standard; quantum dot; silicon; single-electron pump;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4799-5205-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2014.6898448
  • Filename
    6898448