An inter-subband device with THz applications

Author

Buckle, Philip D. ; Dawson, Philip ; Lynch, Mark A. ; Kuo, Chun-Yi ; Missous, Mohammed ; Truscott, William S.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

fYear

1998

fDate

3-4 Sep 1998

Firstpage

82

Lastpage

85

Abstract

Data from optical and electrical measurements on a series of devices based on one design of triple barrier tunnelling structure have been analysed to estimate their behaviour at frequencies over 1 THz. The analysis gives values for the resonantly enhanced admittance, its bandwidth, the bias-frequency relationship and the requirements for a matching circuit to a 50 Ohm environment. The results show that one existing structure could be used in oscillators working at 1 THz

Keywords

resonant tunnelling devices; submillimetre wave generation; submillimetre wave oscillators; 1 THz; 50 ohm; bias-frequency relationship; inter-subband device; matching circuit; oscillators; resonant tunnelling; resonantly enhanced admittance; terahertz applications; triple barrier tunnelling structure; Admittance; Bandwidth; Electric variables measurement; Frequency estimation; Frequency measurement; Optical design; Optical devices; RLC circuits; Resonance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731670

Filename

731670