Evaluation on basic resonant structures and voltage clamping techniques

As the increasing demand of soft switching techniques in order to further increase the efficiency at high frequency operation. Resonant structure is becoming more and more important in reducing the switching loss. Due to the resonant characteristic, excessive voltage over the main switches will be the main problem in high power application. Under this consideration, resonant and voltage clamping DC link are demonstrated and compared in this paper at different power level. Moreover, switching and conducting characteristic of the different devices have large impact on selection of topology. Different behavior of IGBT at high di/dt will change the loss distribution through the various resonant topologies. At last, morphological chart is designed to gain a better understanding on topology composition and selection based on efficiency