Title :
New extra fast soft recovery diodes and their applications
Author :
Li, G. ; Liu, Z.Q. ; Golland, A. ; Wakeman, F.
Author_Institution :
Westcode Semicond. Ltd.
Abstract :
A new range of 1.7 kV, 2.5 kV and 4.5 kV extra fast soft recovery diodes that are optimised for use with press-pack IGBTs and GCTs are described. By using heavy metal diffusion and ion implantation for profiled lifetime control, an optimum trade-off in static and dynamic parameters can be achieved. The new diodes appear to be outstanding in their dynamic characteristics, such as very soft recovery, reverse recovery di/dt > 5000 A/mus and low reverse peak current. The new devices also have high maximum operating temperature, low blocking leakage and positive VF temperature coefficient at rated current level, which is advantageous for parallel applications
Keywords :
insulated gate bipolar transistors; ion implantation; power semiconductor diodes; GCT; IGBT; blocking leakage; extra fast soft recovery diodes; ion implantation; metal diffusion; reverse peak current; reverse recovery; Energy loss; Helium; Insulated gate bipolar transistors; Leakage current; Light emitting diodes; Semiconductor diodes; Telephony; Temperature; Testing; Tin; IGBT; fast recovery diode; free wheel diode (FWD); induction heating; traction application;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219686
