New extra fast soft recovery diodes and their applications

Author

Li, G. ; Liu, Z.Q. ; Golland, A. ; Wakeman, F.

Author_Institution

Westcode Semicond. Ltd.

fYear

2005

fDate

11-14 Sept. 2005

Abstract

A new range of 1.7 kV, 2.5 kV and 4.5 kV extra fast soft recovery diodes that are optimised for use with press-pack IGBTs and GCTs are described. By using heavy metal diffusion and ion implantation for profiled lifetime control, an optimum trade-off in static and dynamic parameters can be achieved. The new diodes appear to be outstanding in their dynamic characteristics, such as very soft recovery, reverse recovery di/dt > 5000 A/mus and low reverse peak current. The new devices also have high maximum operating temperature, low blocking leakage and positive V_F temperature coefficient at rated current level, which is advantageous for parallel applications

Keywords

insulated gate bipolar transistors; ion implantation; power semiconductor diodes; GCT; IGBT; blocking leakage; extra fast soft recovery diodes; ion implantation; metal diffusion; reverse peak current; reverse recovery; Energy loss; Helium; Insulated gate bipolar transistors; Leakage current; Light emitting diodes; Semiconductor diodes; Telephony; Temperature; Testing; Tin; IGBT; fast recovery diode; free wheel diode (FWD); induction heating; traction application;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219686

Filename

1665876