Narrowband microwave emission by a frequency-locked current oscillation in a GaAs/AlAs superlattice

Author

Schomburg, E. ; Haeussler, M. ; Hofbeck, K. ; Renk, K.F. ; Chamberlain, J.M. ; Pavel, D.G. ; Koschurinov, Yu. ; Ustinov, V. ; Zhukov, A. ; Kovsch, A. ; Kop´ev, P.S.

Author_Institution

Dept. of Phys., Nottingham Univ., UK

fYear

1998

fDate

3-4 Sep 1998

Firstpage

124

Lastpage

126

Abstract

We report on frequency locking of a self-sustained current oscillation in a GaAs/AlAs wide miniband superlattice oscillator emitting microwave radiation at 23 GHz with a power of about 0.3 mW. The current oscillation was caused by travelling dipole domains and the locking was due to interaction of the domains with an external narrowband high-frequency field. We observed that the linewidth of the frequency-locked oscillation was less than 10 Hz compared to 105 Hz for the free oscillator, indicating synchronisation of the dipole domain propagation with the external field

Keywords

III-V semiconductors; aluminium compounds; current fluctuations; gallium arsenide; microwave generation; microwave oscillators; semiconductor superlattices; 0.3 mW; 23 GHz; GaAl-AlAs; dipole domain propagation; external narrowband high-frequency field; frequency-locked current oscillation; narrowband microwave emission; oscillation linewidth; self-sustained current oscillation; travelling dipole domains; wide miniband superlattice oscillator; Current-voltage characteristics; Electrons; Frequency; Gallium arsenide; Hafnium; Microwave devices; Narrowband; Oscillators; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731681

Filename

731681