Title :
Plasma wave electronics: terahertz sources and detectors using two dimensional electronic fluid in high electron mobility transistors
Author :
Shur, M.S. ; Lu, J.-Q. ; Dyakonov, M.I.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We discuss our recent theoretical and experimental results dealing with plasma waves in high electron mobility transistors (HEMTs) and their applications for sources and detectors operating in millimeter and submillimeter range. Plasma waves in short-channel HEMTs have a resonant response. The HEMTs operating in a plasma wave regime should respond to much higher frequencies than for conventional, transit-time limited devices, since the plasma waves propagate much faster than electrons
Keywords :
high electron mobility transistors; semiconductor plasma; submillimetre wave detectors; submillimetre wave generation; submillimetre wave transistors; two-dimensional electron gas; high electron mobility transistors; plasma wave electronics; propagation speed; resonant response; short-channel HEMTs; terahertz detectors; terahertz sources; two dimensional electronic fluid; Detectors; Electron mobility; Equations; FETs; Frequency; HEMTs; MODFETs; Plasma waves; Resonance; Voltage;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731682