Planar Schottky diodes for submillimeter wave applications

Author

Lin, Chih-I ; Simon, Ansgar ; Rodriguez-Gironés, Manuel ; Hartnagel, Hans Ludwig ; Zimmermann, Paul ; Zimmermann, Raphael ; Henneberger, Ralf

Author_Institution

Inst. fur Hochfrequenztech., Univ. of Technol., Darmstadt, Germany

fYear

1998

fDate

3-4 Sep 1998

Firstpage

135

Lastpage

138

Abstract

The main limitation of whisker-contacted diode technology is that no integration is possible. Therefore, the development of competitive planar Schottky barrier diodes has been put forward in the last decade. The quasi-vertical planar Schottky diode was proposed several years ago and the necessary technologies are developed for a reliable fabrication. We show the recent status of this type of planar Schottky diodes. At 200 GHz an output power of 5 mW (12.5% efficiency) has been achieved with a quasi-vertical planar varactor diode. Recent activities concentrate on anti-parallel Schottky mixer diodes and integration of diodes (0.8 μm anode diameter) with several receiver components. These diodes offer characteristics comparable to substrateless diodes with the same diode parameters

Keywords

Schottky diode mixers; Schottky diodes; frequency multipliers; millimetre wave diodes; millimetre wave frequency convertors; millimetre wave mixers; submillimetre wave diodes; submillimetre wave mixers; varactors; 12.5 percent; 200 GHz; 5 mW; EHF; MM-wave applications; THF; anti-parallel mixer diodes; planar Schottky diodes; quasi-vertical planar varactor diode; submillimeter wave applications; Bridge circuits; Capacitance; Gallium arsenide; Geometry; Radio frequency; Schottky barriers; Schottky diodes; Submillimeter wave filters; Submillimeter wave technology; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731684

Filename

731684