A comparison study between double and single gate p-IMOS

Author

Hassani, F.A. ; Fathipour, M. ; Mehran, M.

Author_Institution

Univ. of Tehran, Tehran

fYear

2007

fDate

26-28 Sept. 2007

Firstpage

1

Lastpage

7

Abstract

A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p- IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.

Keywords

MOS integrated circuits; ON-OFF current ratio; body thickness reduction; double-single gate p-IMOS; single gate device; subthreshold slope; threshold voltage; Doping; Electric variables; Electron mobility; Fabrication; Impact ionization; MOSFET circuits; Space charge; Temperature; Threshold voltage; Tunneling; DG p-IMOS; ON/OFF current ratio; SG p-IMOS; electrical characteristics; process definition;

fLanguage

English

Publisher

ieee

Conference_Titel

AFRICON 2007

Conference_Location

Windhoek

Print_ISBN

978-1-4244-0987-7

Electronic_ISBN

978-1-4244-0987-7

Type

conf

DOI

10.1109/AFRCON.2007.4401526

Filename

4401526