DocumentCode
2364114
Title
Comparison of power semiconductor utilization, losses and harmonic spectra of state-of-the-art 4.16 kV multi-level voltage source converters
Author
Fazel, Seyed Saeed ; Krug, Dietmar ; Taleb, Tahar ; Bernet, Steffen
Author_Institution
Technische Univ. Berlin
fYear
2005
fDate
11-14 Sept. 2005
Abstract
This paper compares a three-level neutral point clamped voltage source converter (3L-NPC VSC), a three-level flying capacitor voltage source converter (3L-FLC VSC), a four-level flying capacitor voltage source converter (4L-FLC VSC) and nine-level-series connected H-bridge voltage source converter (9L-SCHB VSC) on the basis of state-of-the-art 6.5 kV, 4.5 kV and 1.7 kV IGBTs for a 4.16 kV medium voltage converter. The design of the power semiconductors, the installed switch power, converter losses, the semiconductor loss distribution, modulation strategies and the harmonic spectra are compared in detail
Keywords
insulated gate bipolar transistors; power conversion harmonics; power semiconductor devices; 1.7 kV; 4.16 kV; 4.5 kV; 6.5 kV; IGBT; four-level flying capacitor voltage source converter; medium voltage converter; multilevel voltage source converters; nine-level-series connected H-bridge voltage source converter; power semiconductors; semiconductor loss distribution; three-level flying capacitor voltage source converter; three-level neutral point clamped voltage source converter; Capacitors; DH-HEMTs; Frequency conversion; Insulated gate bipolar transistors; Medium voltage; Power conversion; Power system harmonics; Switching converters; Temperature; Topology; Medium Voltage Drives; Multi-level Converters; Power Electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219699
Filename
1665889
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