DocumentCode :
2364114
Title :
Comparison of power semiconductor utilization, losses and harmonic spectra of state-of-the-art 4.16 kV multi-level voltage source converters
Author :
Fazel, Seyed Saeed ; Krug, Dietmar ; Taleb, Tahar ; Bernet, Steffen
Author_Institution :
Technische Univ. Berlin
fYear :
2005
fDate :
11-14 Sept. 2005
Abstract :
This paper compares a three-level neutral point clamped voltage source converter (3L-NPC VSC), a three-level flying capacitor voltage source converter (3L-FLC VSC), a four-level flying capacitor voltage source converter (4L-FLC VSC) and nine-level-series connected H-bridge voltage source converter (9L-SCHB VSC) on the basis of state-of-the-art 6.5 kV, 4.5 kV and 1.7 kV IGBTs for a 4.16 kV medium voltage converter. The design of the power semiconductors, the installed switch power, converter losses, the semiconductor loss distribution, modulation strategies and the harmonic spectra are compared in detail
Keywords :
insulated gate bipolar transistors; power conversion harmonics; power semiconductor devices; 1.7 kV; 4.16 kV; 4.5 kV; 6.5 kV; IGBT; four-level flying capacitor voltage source converter; medium voltage converter; multilevel voltage source converters; nine-level-series connected H-bridge voltage source converter; power semiconductors; semiconductor loss distribution; three-level flying capacitor voltage source converter; three-level neutral point clamped voltage source converter; Capacitors; DH-HEMTs; Frequency conversion; Insulated gate bipolar transistors; Medium voltage; Power conversion; Power system harmonics; Switching converters; Temperature; Topology; Medium Voltage Drives; Multi-level Converters; Power Electronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
Type :
conf
DOI :
10.1109/EPE.2005.219699
Filename :
1665889
Link To Document :
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