Forward and inverse mode Early voltage dependence on current and temperature for advanced SiGe-pnp on SOI

Author

Babcock, Jeff A. ; Sadovnikov, Alexei ; Choi, Li Jen ; Van Noort, Wibo ; Allard, Paul ; Cestra, Greg

Author_Institution

Nat. Semicond., Santa Clara, CA, USA

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

9

Lastpage

12

Abstract

We present a comprehensive investigation of Early voltage (VA) versus drive current dependence for SiGe-pnp bipolar transistors fabricated on thick-film SOI, operating in normal (forward) and inverse (reverse) mode bipolar conditions. Thermal resistance effects are separated by comparing HBT devices with different thermal footprints for SiGe-pnp transistors characterized in normal and inverse mode of operation. Results show that the emitter and collector resistances play a significant role in the Early voltage characteristics. TCAD simulations are used to explain the observations, showing agreement to experimental data measured between -60°C to +200°C.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; silicon-on-insulator; technology CAD (electronics); thermal resistance; SiGe; SiGe-pnp heterojunction bipolar transistors; TCAD simulations; collector resistance; drive current dependence; emitter resistance; forward mode mode bipolar condition; inverse mode early voltage dependence; silicon-on-insulator; temperature -60 degC to 200 degC; thermal footprints; thermal resistance effects; Current density; Layout; Reactive power; Silicon germanium; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082738

Filename

6082738