Title :
A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power
Author :
Dabag, Hayg-Taniel ; Kim, Joohwa ; Larson, Lawrence E. ; Buckwalter, James F. ; Asbeck, Peter M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA, USA
Abstract :
An efficient power amplifier (PA) is demonstrated in a 0.12-μm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 25 % at an output power of 13 dBm in linear operation and 31% in class B mode at an output power of 13.3 dBm. The maximum saturated output power Psat is 14.8 dBm, at which the circuit consumes 77 mW. The chip occupies an area of 0.27 mm2 including pads.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; HBT amplifier; SiGe; efficiency 25 percent; frequency 45 GHz; low impedance biasing network; power 30 mW; power 77 mW; power amplifier; power-added efficiency; silicon germanium BiCMOS process; single stage common-emitter amplifier; size 0.12 mum; voltage handling capability; Current measurement; Gain; Heterojunction bipolar transistors; Impedance; Impedance matching; Power generation; Silicon germanium; 45GHz; BiCMOS; Q-band; millimeter-wave integrated circuit; power amplifier;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082742
