Title :
An improved EKV model for partially depleted SOI devices
Author :
Alvarado, Joaquín ; Cerdeira, Antonio
Author_Institution :
Seccion de Electronica del Estado Solido, CINVESTAV-IPN, Mexico City, Mexico
Abstract :
The modeling of MOSFET for analog applications, using long and short channel devices, requires compact models which describes the transistor behavior with more precision including the high order derivatives. In the present paper an improvement of the EKV model is presented, using the same parameters. A comparison with PD SOI MOSFETs of different channel length shows a very good agreement between experimental and modeled data.
Keywords :
MOSFET; analogue circuits; semiconductor device models; silicon-on-insulator; EKV model; MOSFET modeling; PD SOI MOSFET; analog application; partially depleted SOI device; transistor behavior; Capacitance; Current-voltage characteristics; Data mining; Equations; Immune system; Interpolation; MOSFET circuits; Parameter extraction; Thermal factors; Threshold voltage; EKV; MOSFET modeling;
Conference_Titel :
Electrical and Electronics Engineering, 2005 2nd International Conference on
Print_ISBN :
0-7803-9230-2
DOI :
10.1109/ICEEE.2005.1529611
