Title :
Charging/discharging effects in nc-Si/SiO2 superlattice prepared by LPCVD
Author :
Quiroga, Enrique ; Yu, Zhenrui ; Aceves, Mariano
Author_Institution :
Nat. Inst. for Astrophys., Opt. & Electron., Puebla, Mexico
Abstract :
Clear charging/discharging effects were observed in nc-Si/SiO2 superlattice structures fabricated by LPCVD (low pressure chemical vapor deposition). I-V measurements were performed at different voltage sweep ranges, voltage steps and delay times (which result in different voltage sweep rate). It was found that a clear current bump, which has a strong dependency on the measurement parameters, could be observed. This current bump is ascribed to the charging of the nc-Si dots in the superlattice structures. A new memory device based on this structure can be possibly developed.
Keywords :
CVD coatings; memory architecture; semiconductor superlattices; silicon; silicon compounds; surface charging; I-V measurements; LPCVD; SiO2-Si; charging effects; current bump; delay time; discharging effects; low pressure chemical vapor deposition; memory device; nc-Si-SiO2 superlattice; voltage steps; voltage sweep; Annealing; Capacitors; Current measurement; Delay effects; Electrodes; Extraterrestrial measurements; Performance evaluation; Superlattices; Temperature; Voltage; charging; superlattice; tunneling;
Conference_Titel :
Electrical and Electronics Engineering, 2005 2nd International Conference on
Print_ISBN :
0-7803-9230-2
DOI :
10.1109/ICEEE.2005.1529612
