Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations

Author

Bhattacharyya, A. ; Maneux, C. ; Fregonese, S. ; Zimmer, T.

Author_Institution

Lab. de l´´Integration du Materiau au Syst. (IMS), Univ. de Bordeaux, Talence, France

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

53

Lastpage

56

Abstract

In this paper, simulation and modeling results for a npn SiGe spike mono emitter transistor are presented covering both DC and frequency operations. First, the results obtained for a SiGe spike emitter are compared with the conventional HBT. Then model parameter extraction with the help of HICUM model is performed in the simulated data for the new device. The accurate compact modeling introduces a new recombination time constant parameter inside the existing HICUML2.24 model. Modeling results with the extended model indicate a good agreement not only in DC characteristics but also in dynamic behavior.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; DC characteristics; HICUML2.24 model; SiGe; model parameter extraction; npn spike monoemitter HBT modelling; npn spike monoemitter transistor; recombination time constant parameter; Calibration; Heterojunction bipolar transistors; Integrated circuit modeling; MONOS devices; Mathematical model; Silicon germanium; Bipolar modeling and simulation; device physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082748

Filename

6082748