Title :
Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations
Author :
Bhattacharyya, A. ; Maneux, C. ; Fregonese, S. ; Zimmer, T.
Author_Institution :
Lab. de l´´Integration du Materiau au Syst. (IMS), Univ. de Bordeaux, Talence, France
Abstract :
In this paper, simulation and modeling results for a npn SiGe spike mono emitter transistor are presented covering both DC and frequency operations. First, the results obtained for a SiGe spike emitter are compared with the conventional HBT. Then model parameter extraction with the help of HICUM model is performed in the simulated data for the new device. The accurate compact modeling introduces a new recombination time constant parameter inside the existing HICUML2.24 model. Modeling results with the extended model indicate a good agreement not only in DC characteristics but also in dynamic behavior.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; DC characteristics; HICUML2.24 model; SiGe; model parameter extraction; npn spike monoemitter HBT modelling; npn spike monoemitter transistor; recombination time constant parameter; Calibration; Heterojunction bipolar transistors; Integrated circuit modeling; MONOS devices; Mathematical model; Silicon germanium; Bipolar modeling and simulation; device physics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082748
