Title :
High speed channel resistive sensor interface with RHBD in 0.5 µm SiGe BiCMOS for UWT from −180°C to 120°C
Author :
Geng, Xueyang ; Ma, Desheng ; Chen, Zhenqi ; Dai, Fa ; Cressler, John D. ; Yaeger, Jeremy A. ; Mojarradi, Mohammad M. ; Mantooth, Alan ; Blalock, Benjamin J. ; Berger, Richard W.
Author_Institution :
Auburn Univ., Auburn, AL, USA
Abstract :
High speed channel (HSC) resistive sensor interface is an analog sampling channel designed for measuring the resistance variations with data rate at 5 kHz. It measures the external resistance variation and digitizes the received signal using a 12-bit analog to digital converter (ADC). The HSC includes a Wheatstone bridge with programmable configurations, a high voltage cap stack sampler, a 6th order Butterworth switching capacitor filter, and a continuous time variable gain amplifier (VGA). An 8-bit voltage mode calibration digital to analog converter (DAC) is used to calibrate the common mode voltage level. An 8-bit current mode stimulus DAC is used to provide the current source to the Wheatstone bridge through a high voltage current mirror. With radiation hardening by design (RHBD), the HSC is implemented in a 0.5 μm SiGe BiCMOS technology for applications in aerospace environment under extreme temperature, radiation, pressure and vibration.
Keywords :
BiCMOS integrated circuits; Butterworth filters; Ge-Si alloys; analogue-digital conversion; bridge circuits; continuous time systems; digital-analogue conversion; electric sensing devices; radiation hardening (electronics); 6th order Butterworth switching capacitor filter; BiCMOS technology; RHBD; SiGe; UWT; Wheatstone bridge; analog sampling channel; analog-to-digital converter; common mode voltage level; continuous time variable gain amplifier; digital-to-analog converter; frequency 5 kHz; high speed channel resistive sensor interface; high voltage cap stack sampler; programmable configurations; radiation hardening by design; size 0.5 mum; temperature -180 degC to 120 degC; word length 12 bit; word length 8 bit; Active filters; Bridge circuits; Capacitors; Mirrors; Resistors; Silicon germanium; Temperature measurement; Butterworth filter; DAC; High speed channel (HSC); RHBD; Wheatstone bridge; cryogenic circuits; resistive sensor;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082753
