• DocumentCode
    2364609
  • Title

    A 4dB NF 60GHz-band low-noise amplifier with balanced outputs

  • Author

    Jin, Yanyu ; Long, John R. ; Spirito, Marco

  • Author_Institution
    Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2011
  • fDate
    9-11 Oct. 2011
  • Firstpage
    115
  • Lastpage
    118
  • Abstract
    A 60GHz-band, 2-stage low-noise amplifier with 4-6.5dB measured noise figure (50Ω) and over 9GHz bandwidth is described. Peak gain measured from single-ended input to differential outputs is 13.9dB, and input referred P-ldB and IIP3 are -18dBm and -9.8dBm, respectively. Input return loss exceeds 10dB across 50-67GHz. Implemented in 130nm SiGe-BiCMOS, the 380×240μm2 IC consumes 6.8mA from a 2V supply.
  • Keywords
    BiCMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; 2-stage low-noise amplifier; BiCMOS; SiGe; balanced outputs; bandwidth 9 GHz; current 6.8 mA; frequency 50 GHz to 67 GHz; input return loss; noise figure 4 dB to 6.5 dB; single-ended input; size 130 nm; voltage 2 V; Frequency measurement; Gain; Impedance matching; Measurement uncertainty; Noise figure; Receivers; 60GHz receiver front-end; Millimeter-wave low-noise amplifier (LNA); active balun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-61284-165-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2011.6082761
  • Filename
    6082761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2364609