DocumentCode :
2364609
Title :
A 4dB NF 60GHz-band low-noise amplifier with balanced outputs
Author :
Jin, Yanyu ; Long, John R. ; Spirito, Marco
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands
fYear :
2011
fDate :
9-11 Oct. 2011
Firstpage :
115
Lastpage :
118
Abstract :
A 60GHz-band, 2-stage low-noise amplifier with 4-6.5dB measured noise figure (50Ω) and over 9GHz bandwidth is described. Peak gain measured from single-ended input to differential outputs is 13.9dB, and input referred P-ldB and IIP3 are -18dBm and -9.8dBm, respectively. Input return loss exceeds 10dB across 50-67GHz. Implemented in 130nm SiGe-BiCMOS, the 380×240μm2 IC consumes 6.8mA from a 2V supply.
Keywords :
BiCMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; 2-stage low-noise amplifier; BiCMOS; SiGe; balanced outputs; bandwidth 9 GHz; current 6.8 mA; frequency 50 GHz to 67 GHz; input return loss; noise figure 4 dB to 6.5 dB; single-ended input; size 130 nm; voltage 2 V; Frequency measurement; Gain; Impedance matching; Measurement uncertainty; Noise figure; Receivers; 60GHz receiver front-end; Millimeter-wave low-noise amplifier (LNA); active balun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1088-9299
Print_ISBN :
978-1-61284-165-6
Type :
conf
DOI :
10.1109/BCTM.2011.6082761
Filename :
6082761
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2364609
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